Hynix 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V 288-pin UDIMM RAM Module Form Factor_288-pin EUDIMM x16 configuration RAM kit from

x16 configuration RAM kit from Hynix is for use in DDR2 compatible systems and operates at 800 MT/s with an overall transfer rate of PC2-6400

HMT325U7BFR8C-H9T0 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 128Mx8 Pieces in Kit 1 Compatibility

2xM470L6423EN0-CB0 Capacity 1GB (2x 512MB) Brand Samsung Speed DDR-266 - 266MT/s - PC2100 Voltage 2

and 16 lane slots to benchmark the XP941

Hynix 8GB (1x 8GB) CL19 DDR4-2666 PC4-21300 1.2V 288-pin UDIMM RAM Module Form Factor_288-pin EUDIMM x16 configuration RAM kit fromProduct Overview This 8GB (1x 8GB) DDR4 2666 MT s RAM module from Hynix is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.