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Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Form Factor_288-pin EUDIMM 2xCT51272AF667 Capacity 8GB (2x 4GB)

SKU 75406546933
4.7
USD42.99 USD82.99

Pay in 4 interest-free payments of $10.75 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 15 - Aug 20

Description

2xCT51272AF667 Capacity 8GB (2x 4GB) Brand Crucial Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

2xM393A1G40DB0-CPB Capacity 16GB (2x 8GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR4 2400 MT/s 288-pin RDIMM RAM module from Hynix

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Configuration 16-chip 128M x8 Pieces in Kit 1 Compatibility

2xM393B2G70QH0-YK0 Capacity 32GB (2x 16GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 240-pin UDIMM RAM Module Form Factor_288-pin EUDIMM 2xCT51272AF667 Capacity 8GB (2x 4GB)Product Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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