Samsung 16GB (1x 16GB) CL15 DDR4-2133 PC4-17000 1.2V ECC 260-pin SODIMM RAM Module Type_DDR 5V Technology DDR3 Error Correction

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank Configuration 8-chip 128M x8 Pieces in Kit 2 Compatibility

HMT41GU7BFR8A-PBT0 Capacity 8GB (1x 8GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

M391A1K43BB1-CRC Capacity 8GB (1x 8GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

x8 configuration RAM module from Hynix and Ramcity is for use in DDR4 compatible systems and operates at 2133 MT/s with an overall transfer rate of PC4-17000

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 1024M x8 Pieces in Kit 2 Compatibility

Samsung 16GB (1x 16GB) CL15 DDR4-2133 PC4-17000 1.2V ECC 260-pin SODIMM RAM Module Type_DDR 5V Technology DDR3 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2133 MT s 260 pin SODIMM RAM module from Samsung . This RAM module is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL15, and is