Micron 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr-400-udimm-2gb-2x-dr-fm 2xM391B1G73QH0-YK0 Capacity 16GB (2x 8GB)

2xM391B1G73QH0-YK0 Capacity 16GB (2x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM CAS Latency CL9 Pieces in Kit 1 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (1x 2GB) DDR2 667 MT/s 240-pin RDIMM RAM module from Hynix

x4 configuration RAM kit is for use in DDR compatible systems and operates at 266 MT/s with an overall transfer rate of PC2100

CT8G4RFS824A Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Micron 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr-400-udimm-2gb-2x-dr-fm 2xM391B1G73QH0-YK0 Capacity 16GB (2x 8GB)Product Overview This 4GB (1x 4GB) DDR3L 1066 MT s RAM module from Micron is for use in DDR3L compatible systems and operates at 1066 MT s with an overall transfer rate of PC3L 8500. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.