Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-2x-dr MT16JTF1G64AZ-1G6E1 Capacity 8GB (1x 8GB)

MT16JTF1G64AZ-1G6E1 Capacity 8GB (1x 8GB) Brand Micron Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Pieces in Kit 1 Compatibility

M391B5773DH0-YH9 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 1GB (1x 1GB) DDR 266 MT/s 184-pin RDIMM RAM module from Samsung

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2133 MT/s 260-pin SODIMM RAM module from Samsung

Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-2x-dr MT16JTF1G64AZ-1G6E1 Capacity 8GB (1x 8GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.